In the pursuit of next-generation electronic devices, it is not silicon semiconductors leading the way, but III-V semiconductors that are at the forefront of this endeavor. These remarkable compounds, ...
According to a new study from Japan, the global installed PV capacity in solar-powered EVs may reach up to 50 GW by 2030. Its authors claim that solar cells with efficiencies higher than 30%, ...
Fraunhofer ISE researchers utilized a new front metallization technique to produce a III-V gallium arsenide solar cell. For mask and plate front metallization, they used a new two-step printing scheme ...
In a new review article publication from Opto-Electronic Advances, Yingtao Hu, Di Liang and, Raymond G. Beausoleil from Hewlett Packard Labs discuss advanced III-V-on-silicon photonic integration.
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