The 800-mW NESG250134 and 1W NESG260234 medium-power SiGe (silicon-germanium) HBT (heterojunction-bipolar-transistor) amplifiers suit use in two-way radio applications, such as FRS (Family Radio ...

Last time on Circuit VR, we looked at creating a very simple common emitter amplifier, but we didn’t talk about how to select the capacitor values, or much about why we wanted them. We are going to ...

NEC is now offering a 2-W SiGe HBT transistor amplifier for two-way radio applications including FRS, GMRS, and SMR, as well as general UHF and ISM band applications. NEC is now offering a 2-W SiGe ...

Liam Devlin and Andy Dearn describe the design of a 25W X-band gallium nitride (GaN) power amplifier. Gallium nitride (GaN) technology is very well suited to the realisation of solid-state microwave ...

Just as the common emitter amplifier and common base amplifier each tied those respective transistor terminals to a fixed potential and used the other two terminals as amplifier input and output, so ...

It may not be to everyone's taste, but this brand new monobloc amplifier from McIntosh cleverly blends both vacuum tube and solid-state technology in one chassis. If you’re not a serious audiophile ...

If your transistor amplifier sounds like crap, it is your fault, not that of the transistors: it means your amplifier doesn't have enough head room for the desired volume or that it was just plain ...

Announced yesterday, researchers from Surrey and Cambridge universities and the National Research Institute in Rome have used thin-film source-gated transistor (SGT) to create compact analogue circuit ...