IEEE Spectrum on MSN

Intel, Synopsys, TSMC All Unveil Record Memory Densities

Last week at the IEEE International Solid State Circuits Conference, two of the biggest rivals in advanced chipmaking, Intel ...
Nature

Low Power SRAM Design and Technology

Low power Static Random-Access Memory (SRAM) design remains at the forefront of research in modern electronics due to its critical role in minimising energy consumption while maintaining high ...
Semiconductor Engineering

SRAM With Mixed Signal Logic With Noise Immunity in 3nm Nanosheet (IBM)

A new technical paper titled “SRAM and Mixed-Signal Logic With Noise Immunity in 3nm Nano-Sheet Technology” was published by researchers at IBM T. J. Watson Research Center and IBM. “A modular 4.26Mb ...
EDN

Toshiba, IBM, and AMD Develop World’s Smallest FinFET SRAM Cell with High-k/Metal Gate

TOKYO & NEW YORK & SUNNYVALE, Calif. – 16 Dec 2008: Toshiba Corporation (TOKYO:6502), IBM (NYSE: IBM), and AMD (NYSE:AMD) today announced that they have together developed a Static Random Access ...
Semiconductor Engineering

Potential of AOS Memories As A High-Performance SRAM Substitute (Georgia Tech, U. of Virginia)

A new technical paper titled “Optimization and Benchmarking of Monolithically Stackable Gain Cell Memory for Last-Level Cache” was published by researchers at Georgia Institute of Technology and ...