Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started providing engineering samples of “ TB9104FTG ,” a ...
A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
Properly designing the gate drive circuit for high-voltage MOSFETs is essential to ensure proper performance from the MOSFET one desires. Far too often, engineers find themselves having difficulty in ...
This paper provides details of MOSFET switching action in applications with clamped inductive load, when used as a secondary synchronous rectifier, and driving pulse/gate drive transformers. Potential ...
Toshiba Adds Five New MOSFET Gate Driver ICs that Will Help Reduce Device Footprints | Business Wire
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added five products to its lineup of MOSFET gate driver ICs in the TCK42xG Series for mobile devices ...
For the PDF version of this article, click here. Proper gate drive is critical to the performance and reliability of insulated gate bipolar transistor (IGBT) modules. The gate driver must produce high ...
MOSFET switching determined to be the source of the damping resistance, as demonstrated using a forward converter SPICE model. The process of correlating SPICE models to bench data often leads to ...
Our 1ED44173/5/6 are the new low side gate driver ICs that integrate over-current protection (OCP), FAULT status output and enable function. This high integration level is excellent for the digitally ...
CHANDLER, Ariz., Feb. 20, 2024 (GLOBE NEWSWIRE) -- The electrification of everything is driving the widespread adoption of Silicon Carbide (SiC) technology in medium-to-high-voltage applications like ...
BEVERLY, Mass.--(BUSINESS WIRE)--IXYS Integrated Circuits Division (ICD), Inc., a wholly owned subsidiary of IXYS Corporation (NASDAQ:IXYS), today announced that the IXD_614SI family has been added to ...
Infineon has introduced 2.3kV isolated gate drivers for IGBTs and mosfets with on-the-fly switchable dual slew-rates. Branded ‘2L-SRC Compact’ and numbered ‘1ED32xx’, 10 and 18A versions are available ...
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