A new publication from Opto-Electronic Science; DOI 10.29026/oes.2024.230046 discusses photo-driven Fin Field-Effect Transistors. Infrared detectors are the core components of infrared detection ...
HSINCHU, Taiwan, R.O.C., Feb. 3, 2023 – TSMC today announced the launch of its “TSMC University FinFET Program,” aimed at developing future IC design talent for the industry and empowering academic ...
A new technical paper titled “Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)” was published by researchers at Changzhou University. “This study illustrates a type ...
The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...
A new technical paper titled “An Artificial Neuron with a Leaky Fin-Shaped Field-Effect Transistor for a Highly Scalable Capacitive Neural Network” was published by researchers at KAIST (Korea ...
A new technique uses standard chip fab methods to fabricate the building block of a timing device, critical to all microprocessors. Currently, this timing device, known as an acoustic resonator, must ...
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