Researchers discovered a new mechanism for faster, more efficient magnetic domain wall motion using dual spin torques in cobalt-iridium-platinum multilayers. In spintronic memory, information is ...
A new technical paper titled “Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data” was published by researchers at UT Austin and Samsung Advanced ...
A new technical paper titled “Nitride Ferroelectric Domain Wall Memory for Next-Generation Computing” was published by researchers at Kiel University, Fraunhofer Institute for Silicon Technology (ISIT ...
A research team has taken a major step forward in the field of spintronics, a technology that uses not only the charge but also the spin of electrons to create faster, smarter, and more ...
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