Shrinking ferroelectric tunnel junctions can significantly boost their performance in memory devices, as reported by ...

Electronic devices power everyday life, from smartphones to medical sensors. Yet, as these gadgets grow in number, so does the mounting challenge of electronic waste, or e-waste. Physically transient ...

A major breakthrough in the field of computer memory has just been achieved by Japanese researchers. They have developed a new universal memory technology, surpassing current computer modules in speed ...

A new study reveals that insulating buffer layers are no longer needed for ultrathin magnetic racetrack devices, unlocking new paths for seamless integration with functional substrates. Modern ...

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling new Universal Flash Storage 1 (UFS) Ver. 4.1 embedded memory devices with ...

This year, there won't be enough memory to meet worldwide demand because powerful AI chips made by the likes of Nvidia, AMD and Google need so much of it. Prices for computer memory, or RAM, are ...

The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...

With transistors and logic gates as our basic building blocks, we can begin to construct the actual circuits that make up computer memory. One of the simplest memory circuits is the AND gate, which ...